MTP3J15N3 datasheet(1/8 Pages) CYSTEKEC

Part #	MTP3J15N3

Description	50V P-CHANNEL Enhancement Mode MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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1 / 8 page

CYStech Electronics Corp.

Spec. No. : C465N3

Issued Date : 2009.03.03

Revised Date : 2012.05.18

Page No. : 1/ 8

MTP3J15N3

CYStek Product Specification

50V P-CHANNEL Enhancement Mode MOSFET

MTP3J15N3

BVDSS

-50V

ID

-130mA

RDSON@VGS=-10V, ID=-100mA 4.5Ω(typ)

RDSON@VGS=-5V, ID=-100mA

6Ω(typ)

Features

• Low gate charge

• Excellent thermal and electrical capabilities

• Pb-free package

Equivalent Circuit

Outline

Absolute Maximum Ratings (Tj=25

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

-50

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current @ TA=25

°C, VGS=-5V

ID

-130

mA

Pulsed Drain Current (Note 1)

IDM

-520

mA

Maximum Power Dissipation @ TA=25℃

PD

225

mW

Thermal Resistance, Junction-to-Ambient

Rth,ja

556

°C/W

Maximum Lead Temperature for Soldering Purpose, 10 s

TL

260

°C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : 1. Pulse width≤ 10μs, duty cycle≤2%.

MTP3J15N3

SOT-23

D

G：Gate

S

G

S：Source

D：Drain

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