NPN SILICON HIGH VOLTAGE TRANSISTOR

CSC2330

TO-237

BCE

Intended For Video Output Stages In Black & White in Colour Television Receivers

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

300

V

Collector -Emitter Voltage

VCEO

300

V

Emitter Base Voltage

VEBO

7.0

V

Collector Current Continuous

IC

100

mA

Power Dissipation @ Ta=25 deg C

PD

1.0

W

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

Thermal Resistance Junction to Ambient

Rth (j-a)

130

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Base Voltage

VCBO

IC=100uA, IE=0

300

-

-

V

Collector -Emitter Voltage

VCEO

IC=5mA, IB=0

300

-

-

V

Emitter Base Voltage

VEBO

IE=100uA, IC=0

7.0

-

-

V

Collector Cut off Current

ICBO

VCB=200V, IE=0

-

-

100

nA

Emitter Cut off Current

IEBO

VEB=3V, IC=0

-

-

20

nA

DC Current Gain

hFE

IC=20mA,VCE=10V

40

-

240

Collector Emitter Saturation Voltage

VCE(Sat)

IC=10mA,IB=1mA

-

-

0.5

V

Dynamic Characteristics

Gain Bandwidth Product

ft

VCE=30V,IC=10mA,

-

50

-

MHz

Output Capacitance

Cob

VCB=10V, IE=0

-

4.0

-

pF

f=1MHz

-

-

-

pF

CLASSIFICATION

R

O

Y

hFE

40-80

70-140

120-240

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company