MS9N90

900V N-Channel MOSFET

Publication Order Number: [MS12N60]

Description

The MS9N90 is a N-channel enhancement-mode

MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design,

low on-resistance and cost effectiveness. The TO-220

package is universally preferred for all

commercial-industrial applications

Features

• Gate Charge (Typical 47nC)

• Improved dv/dt Capability, High Ruggedness

• 100% Avalanche Tested

• Maximum Junction Temperature Range (150°C)

• RoHS compliant package

Application

• Adapter

• Switching Mode Power Supply

Packing & Order Information

50/Tube ; 1,000/Box

Graphic symbol

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

900

V

Gate-Source Voltage

±30

V

Drain Current -Continuous (TC=25°C)

9

A

Drain Current -Continuous (TC=100°C)

6

A

Drain Current -Pulsed

36

A

Single Pulsed Avalanche Energy

900

mJ

Repetitive Avalanche Energy

28

mJ

dV/dt

Peak Diode Recovery dV/dt

4.0

V/ns

Power Dissipation (TC=25°C)

280

W

- Derate above 25C

2.22

W/°C

Operating Junction and Storage Temperature

-55 to +150

°C