MS9N90 datasheet(2/4 Pages) BWTECH

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MS9N90

900V N-Channel MOSFET

Publication Order Number: [MS12N60]

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Maximum lead temperature for soldering purposes,

1/8'' from case for 5 seconds

300

°C

• Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

0.75

°C/W

RθJA

Junction-to-Ambient

62.5

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS

Gate Threshold Voltage

VDS = VGS, ID = 250μA

3.0

5.0

*RDS(ON)

Static Drain-Source

On-Resistance

VGS = 10 V , ID = 4.5 A

1.10

1.40

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V , ID = 250μA

900

△BV

DSS /△TJ

Breakdown Voltage Temperature

Coefficient

ID = 250μA, Referenced to

25°C

1.05

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 900 V , VGS = 0 V

VDS = 720 V , VC = 125°C

100

μA

IGSSF

Gate-Body Leakage Current,

Forward

VDS = 30 V, VDS = 0 V

100

μA

IGSSR

Gate-Body Leakage Current,

Reverse

VDS = -30 V, VDS = 0 V

-100

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

CISS

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0MHz

2200

COSS

Output Capacitance

180

CRSS

Reverse Transfer Capacitance

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