MS13P21 datasheet(2/6 Pages) BWTECH

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MS13P21

P-Channel 20-V (D-S) MOSFET

Publication Order Number: [MS13P21]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-20

VGS

Gate-Source Voltage

±8

Continuous Drain Current

a (T

A=25°C)

-1.7

Continuous Drain Currenta (TA =70°C)

-1.4

IDM

Pulsed Drain Current

-2.5

Continuous Source Current (Diode Conduction)

±0.28

Power Dissipation

a (T

A =25°C)

0.34

Power Dissipation

a (T

A =70°C)

0.22

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Units

RTHJA

Maximum Junction-to-Ambient C/W

a (t <= 5 sec)

375

°C/W

Maximum Junction-to-Ambient C/W

a (Steady-State)

430

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS

Gate Threshold Voltage

VDS = VGS, ID =-250μA

-0.4

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±8 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = -16 V , VGS = 0 V

VDS = -16 V , VGS = 0 V , TJ= 55°C

-1

-10

ID(on)

On-State Drain Current

VDS = -5 V, VGs = -4.5 V

-5

IDS(on)

Drain-Source On-Resistance

VGS = -4.5 V, ID = -1.7 A

VGS = -2.5 V, ID = -1.5 A

110

gfs

Forward Tranconductance

VDS = -5V, ID = -1.25 A

VSD

Diode Forward Voltage

IS = -0.46 V, VGS = 0 V

-0.65

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Delay Time

VDD = -10 V , IL = -1 A,

VGEN = -4.5 V , RG = 6 Ω

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

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