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IRFH7191PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH7191PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFH7191PbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 08, 2014 Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 1.2 RJC (Top) Junction-to-Case ––– 22 °C/W RJA Junction-to-Ambient ––– 35 RJA (<10s) Junction-to-Ambient ––– 20 Thermal Resistance D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 103 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 6.2 8.0 m VGS = 10V, ID = 48A VGS(th) Gate Threshold Voltage 2.0 ––– 3.6 V VDS = VGS, ID = 100µA VGS(th) Gate Threshold Voltage Coefficient ––– -4.9 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 80V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 112 ––– ––– S VDS = 25V, ID = 48A Qg Total Gate Charge ––– 26 39 Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.7 ––– VDS = 50V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC VGS = 10V Qgd Gate-to-Drain Charge ––– 8.3 ––– ID = 48A Qgodr Gate Charge Overdrive ––– 12 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 10 ––– Qoss Output Charge ––– 80 ––– nC VDS = 50V, VGS = 0V RG Gate Resistance ––– 1.0 ––– td(on) Turn-On Delay Time ––– 4.5 ––– VDD = 50V, VGS = 10V tr Rise Time ––– 6.1 ––– ns ID = 48A td(off) Turn-Off Delay Time ––– 10.6 ––– RG = 1.0 tf Fall Time ––– 3.6 ––– Ciss Input Capacitance ––– 1685 ––– VGS = 0V Coss Output Capacitance ––– 836 ––– pF VDS = 50V Crss Reverse Transfer Capacitance ––– 16 ––– ƒ = 1.0MHz Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 80 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 234 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.8 1.3 V TJ = 25°C, IS= 48A, VGS=0V trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 48A, VDD = 50V Qrr Reverse Recovery Charge ––– 126 190 nC di/dt = 100A/µs Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 269 mJ IAR Avalanche Current ––– 48 A |
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