MS90N06 datasheet(2/6 Pages) BWTECH

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MS90N06

N-Channel 60-V (D-S) MOSFET

Publication Order Number: [MS90N06]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

±20

Continuous Drain Current

a (T

A=25°C)

IDM

Pulsed Drain Current

360

Continuous Source Current (Diode Conduction)

Power Dissipation

a (T

A =25°C)

300

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +175

°C

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RθJA

Maximum Junction-to-Ambient

62.5

°C/W

RθJC

Maximum Junction-to-Case

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS

Gate Threshold Voltage

VDS = VGS, ID =-250μA

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±20 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = 48 V , VGS = 0 V

VDS = 48 V , VGS = 0 V , TJ= 55°C

ID(on)

On-State Drain Current

VDS = 5 V, VGS = 10 V

120

RDS(on)

Drain-Source On-Resistance

VGS = 10 V, ID = 45 A

VGS = 5.5 V , ID = 44 A

gfs

Forward Tranconductance

VDS = 15 V , ID = 20 A

VSD

Diode Forward Voltage

IS = 45 V , VGS = 0 V

0.84

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Delay Time

VDS = 30 V , RL = 1.5 Ω,

VGEN = 10 V , RGEN = 6 Ω

ID = 20 A

Rise Time

112

td(off)

Turn-Off Delay Time

276

Fall Time

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