Low-Voltage, Silicon RF Power

Amplifier/Predriver

_______________________________________________________________________________________

3

25

20

15

5

10

0

250

150

200

100

50

0

-15

-20

-5

-10

-25

OUTPUT POWER AND CURRENT

vs. INPUT POWER

3.6V

3.6V

5.5V

5.5V

3V

3V

25

20

15

10

5

250

200

150

100

50

TEMPERATURE (°C)

-20

0

20

40

60

80

100

OUTPUT POWER AND CURRENT

vs. TEMPERATURE

-5.5V

3.6V

3V

30

35

40

25

20

15

10

5

-15

-20

-5

-10

-25

OUTPUT POWER AND GAIN

vs. INPUT POWER

3.6V

3.6V

5.5V

5.5V

3V

3V

GAIN

35

15

-20

40

60

80

100

OUTPUT POWER AND GAIN

vs. TEMPERATURE

(NORMAL OPERATING MODE)

20

30

TEMPERATURE (°C)

25

20

0

5.5V

3.6V

3.0V

GAIN

4.0

3.5

3.0

2.0

1.5

2.5

1.0

FREQUENCY (MHz)

400

600

800

1000

1200

1400

1600

INPUT VSWR

vs. FREQUENCY

3V

5V

150

100

50

-50

-100

0

-150

FREQUENCY (MHz)

800

400

1200

1600

2000

RF INPUT IMPEDANCE

vs. FREQUENCY

REAL

IMAG

__________________________________________Typical Operating Characteristics

Note 1: Minimum and maximum parameters are guaranteed by design.

Note 2: For optimum performance at a given frequency, output matching network must be designed for maximum output power.

See

Applications Information section. Operation outside this frequency range is possible but has not been characterized.

Note 3: No damage to the device.

Note 4: All non-harmonically related outputs are more than 60dB below the desired signal for any electrical phase.

AC ELECTRICAL CHARACTERISTICS (continued)

CONDITIONS

BIAS pin capacitor C1 = 120pF

BIAS pin capacitor C1 = 2.2nF

dB

50

µs

1

10

Turn-On/Off Times

UNITS

MIN

TYP

MAX

SYMBOL

PARAMETER

SHDN = 0.4V,

dB

47

RFIN to RFOUT Isolation

MAX2430ISE

MAX2430IEE