ps

1.25Gbps/2.5Gbps, 3V to 5.5V, Low-Noise

Transimpedance Preamplifiers for LANs

2

_______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

source capacitance = 0.85pF, unless otherwise noted.) (Note 1)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

IN Current..............................................................-4mA to +4mA

FILTER Current......................................................-8mA to +8mA

SO package (derate 6.7mW/°C above +70°C).............533mW

Storage Temperature Range .............................-55°C to +150°C

Operating Junction Temperature (die) ..............-55°C to +150°C

Processing Temperature (die) .........................................+400°C

Lead Temperature (soldering, 10sec) .............................+300°C

MAX3267

MAX3266

MAX3267

MAX3266

MAX3267

MAX3266

MAX3266

MAX3267

MAX3266

Power-Supply Rejection Ratio

(PSRR)

50

dB

Output referred, f < 2MHz

PSRR = -20log (

19

76

Transimpedance Linear Range

40

µAp-p

30

Low-Frequency Cutoff

44

kHz

750

920

1100

Small-Signal Bandwidth

1530

1900

2420

MHz

Peak-to-peak

0.95 < linearity < 1.05

-3dB, input

≤ 20µADC

6.6

Input-Referred RMS Noise

485

655

nA

200

DC Input Overload

AC Input Overload

1.0

mAp-p

0.65

mA

192

256

SO package

(Note 2)

Die, packaged in TO-56

header (Note 2)

PARAMETER

MIN

TYP

MAX

UNITS

Filter Resistor

1220

1500

1860

Ω

Output Impedance

48

50

52

Ω

Transimpedance

1540

1900

2330

Ω

Supply Current

Input Bias Voltage

0.69

0.83

0.91

V

26

50

mA

2260

2800

3400

CONDITIONS

Single-ended (per side)

Differential, measured

with 30µAp-p signal

(40µAp-p for MAX3267)

Note 1: Source Capacitance represents the total capacitance at the IN pin during characterization of noise and bandwidth parame-

ters. Figure 1 shows the typical source capacitance vs. reverse voltage for the photodiode used during characterization of

TO-56 header packages. Noise and bandwidth will be affected by the source capacitance. See the

Typical Operating

Characteristics for more information.

Note 2: Input-Referred Noise is calculated as RMS Output Noise / (Gain at f = 10MHz). Noise Density is (Input-Referred Noise) /

Note 3: Deterministic Jitter is measured with the K28.5 pattern applied to the input [00111110101100000101].

Maximum Differential Output

Voltage

185

250

415

mVp-p

Input = 1mAp-p

MAX3266

MAX3267

Input-Referred Noise Density

11.0

(Note 2)

Deterministic Jitter

12

50

ps

(Note 3)

MAX3266

MAX3267