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IRFN350 Datasheet(PDF) 2 Page - International Rectifier

Part # IRFN350
Description  Simple Drive Requirements
PDF  7 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFN350 Datasheet(HTML) 2 Page - International Rectifier

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IRFN350, JANTX2N7227U, JANTXV2N7227U
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
400
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
0.46
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.315
VGS = 10V, ID = 9.0A
Resistance
0.415
VGS = 10V, ID = 14A
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
6.0
S
VDS > 15V, IDS = 9.0A Ã
IDSS
Zero Gate Voltage Drain Current
25
VDS= 320V ,VGS = 0V
250
VDS = 320V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
110
VGS =10V, ID = 14A
Qgs
Gate-to-Source Charge
18
nC
VDS = 200V
Qgd
Gate-to-Drain (‘Miller’) Charge
65
td(on)
Turn-On Delay Time
35
VDD = 200V, ID = 14A,
tr
Rise Time
190
VGS =10V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
170
tf
Fall Time
130
LS + LD
Total Inductance
4.0
Ciss
Input Capacitance
2600
VGS = 0V, VDS = 25V
Coss
Output Capacitance
680
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
250
nA
Ã
nH
ns
µA
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
0.83
RthJ-PCB
Junction-to-PC board
3.0
Soldered to a copper-clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
14
ISM
Pulse Source Current (Body Diode)
À
——
56
VSD Diode Forward Voltage
1.7
V
Tj = 25°C, IS = 14A, VGS = 0V Ã
trr
Reverse Recovery Time
1200
ns
Tj = 25°C, IF = 14A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
11
µC
VDD ≤ 30V Ã
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from the center of drain
pad to center of source pad.



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