Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

14

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

9.0

IDM

Pulsed Drain Current

À

56

PD @ TC = 25°C

Max. Power Dissipation

150

W

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

Á

700

mJ

IAR

Avalanche Current

À

14

A

EAR

Repetitive Avalanche Energy

À

15

mJ

dv/dt

Peak Diode Recovery dv/dt

Â

4.0

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temperature

300 (for 5 sec)

Weight

2.6 (Typical)

g

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-

state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-

established advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are well-

suited for applications such as switching power supplies,

motor controls, inverters, choppers, audio amplifiers,

high energy pulse circuits, and virtually any application

where high reliability is required. The HEXFET

transistor’s totally isolated package eliminates the need

for additional isolating material between the device and

the heatsink. This improves thermal efficiency and

reduces drain capacitance.

°C

A

POWER MOSFET

SURFACE MOUNT(SMD-1)

12/12/07

www.irf.com

1

SMD-1

Product Summary

Part Number

IRFN350

0.315

Ω

14A

For footnotes refer to the last page

IRFN350

JANTX2N7227U

JANTXV2N7227U

REF:MIL-PRF-19500/592

400V, N-CHANNEL

HEXFET

Features:

PD-91551D