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M24M02-DWMN3TP Datasheet(PDF) 26 Page - STMicroelectronics |
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M24M02-DWMN3TP Datasheet(HTML) 26 Page - STMicroelectronics |
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26 / 38 page ![]() DC and AC parameters M24M02-A125 26/38 DocID027947 Rev 2 8 DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. Table 6. Cycling performance by groups of 4 byte Symbol Parameter Test condition Min. Max. Unit Ncycle Write cycle endurance(1) 1. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer, or for the status register byte (refer also to Section 5.2: Cycling with Error Correction Code (ECC)). The Write cycle endurance is defined by characterization and qualification. TA ≤ 25 °C, 2.5 V < VCC < 5.5 V - 4,000,000 Write cycle(2) 2. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or a Lock Identification Page instruction is decoded. When using those Write instructions, refer also to Section 5.2: Cycling with Error Correction Code (ECC). TA = 85 °C, 2.5 V < VCC < 5.5 V - 1,200,000 TA = 105 °C, 2.5 V < VCC < 5.5 V - 300,000 TA = 125 °C, 2.5 V < VCC < 5.5 V - 100,000 Table 7. Operating conditions (voltage range W) Symbol Parameter Min. Max. Unit VCC Supply voltage 2.5 5.5 V TA Ambient operating temperature –40 125 °C Table 8. AC measurement conditions Symbol Parameter Min. Max. Unit Cbus Load capacitance 100 pF - SCL input rise/fall time, SDA input fall time - 50 ns - Input levels 0.2 VCC to 0.8 VCC V - Input and output timing reference levels 0.3 VCC to 0.7 VCC V |
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