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SI4438 Datasheet(PDF) 10 Page - Silicon Laboratories

Part # SI4438
Description  Low active power consumption
PDF  44 Pages
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Manufacturer  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

SI4438 Datasheet(HTML) 10 Page - Silicon Laboratories

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Si4438
10
Rev 1.0
Table 7. Thermal Operating Characteristics
Parameter
Value
Unit
Operating Ambient Temperature Range TA
–40 to +85
C
Thermal Impedance
JA
30
C/W
Junction Temperature TJMAX
+125
C
Storage Temperature Range TSTG
–55 to +125
C
Table 8. Absolute Maximum Ratings*
Parameter
Value
Unit
VDD to GND
–0.3, +3.6
V
Instantaneous VRF-peak to GND on TX Output Pin
–0.3, +8.0
V
Sustained VRF-peak to GND on TX Output Pin
–0.3, +6.5
V
Voltage on Digital Control Inputs
–0.3, VDD + 0.3
V
Voltage on Analog Inputs
–0.3, VDD + 0.3
V
Voltage on XIN Input when using a TCXO
–0.7, VDD + 0.3
V
RX Input Power
+10
dBm
Operating Ambient Temperature Range TA
–40 to +85
C
Thermal Impedance
JA
30
C/W
Junction Temperature TJ
+125
C
Storage Temperature Range TSTG
–55 to +125
C
*Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of
the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. Power Amplifier may be damaged if switched on without proper load or termination connected. TX
matching network design will influence TX VRF-peak on TX output pin. Caution: ESD sensitive device.



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