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STM32F411CC Datasheet(PDF) 63 Page - STMicroelectronics

Part # STM32F411CC
Description  ARM® Cortex®-M4 32b MCUFPU, 125 DMIPS, 512KB Flash, 128KB RAM, USB OTG FS, 11 TIMs, 1 ADC, 13 comm. interfaces
PDF  149 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F411CC Datasheet(HTML) 63 Page - STMicroelectronics

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STM32F411xC STM32F411xE
Electrical characteristics
123
PD
Power dissipation at
TA = 125 °C (range 3)(7)
UFQFPN48
-
-
156
mW
WLCSP49
-
-
98
LQFP64
-
-
106
LQFP100
-
-
116
UFBGA100
-
-
81
TA
Ambient temperature for
range 6
Maximum power dissipation
- 40
-
85
°C
Low power dissipation(8)
- 40
-
105
Ambient temperature for
range 7
Maximum power dissipation
- 40
-
105
Low power dissipation(8)
- 40
-
125
Ambient temperature for
range 3
Maximum power dissipation
- 40
-
110
Low power dissipation(8)
- 40
-
130
TJ
Junction temperature range
Range 6
- 40
-
105
Range 7
- 40
-
125
Range 3
- 40
-
130
1. VDD/VDDA minimum value of 1.7 V with the use of an external power supply supervisor (refer to Section 3.15.2: Internal
reset OFF).
2. When the ADC is used, refer to Table 65: ADC characteristics.
3. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.
4. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and
VDDA can be tolerated during power-up and power-down operation.
5. Guaranteed by test in production.
6. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled
7. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.
8. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.
Table 14. General operating conditions (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 15. Features depending on the operating power supply range
Operating
power
supply
range
ADC
operation
Maximum
Flash
memory
access
frequency
with no wait
states
(fFlashmax)
Maximum Flash
memory access
frequency with
wait states (1)(2)
I/O operation
Clock output
frequency on
I/O pins(3)
Possible
Flash
memory
operations
VDD =1.7 to
2.1 V(4)
Conversion
time up to
1.2 Msps
16 MHz(5)
100 MHz with 6
wait states
– No I/O
compensation
up to 30 MHz
8-bit erase
and program
operations
only
VDD = 2.1 to
2.4 V
Conversion
time up to
1.2 Msps
18 MHz
100 MHz with 5
wait states
– No I/O
compensation
up to 30 MHz
16-bit erase
and program
operations



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