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STGWA40H65DFB Datasheet(PDF) 1 Page - STMicroelectronics |
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STGWA40H65DFB Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 17 page  June 2016 DocID029398 Rev 1 1/17 This is information on a product in full production. www.st.com STGWA40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGWA40H65DFB G40H65DFB TO-247 long leads Tube |
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