STGWA40H65DFB datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STGWA40H65DFB

4/17

DocID029398 Rev 1

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

1.6

VGE = 15 V, IC = 40 A,

TJ = 125 °C

1.7

VGE = 15 V, IC = 40 A,

TJ = 175 °C

1.8

Forward on-voltage

IF = 40 A

1.7

2.45

IF = 40 A, TJ = 125 °C

1.4

IF = 40 A, TJ = 175 °C

1.3

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

5412

Coes

Output

capacitance

198

Cres

Reverse transfer

capacitance

107

Total gate charge

VCC = 520 V, IC = 40 A, VGE = 15 V

(see Figure 29: " Gate charge test

circuit")

210

Qge

Gate-emitter

charge

Qgc

Gate-collector

charge

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VCE = 400 V, IC = 40 A, VGE = 15 V,

RG = 5

Ω (see Figure 28: " Test circuit for

inductive load switching" )

Current rise

time

(di/dt)on

Turn-on

current slope

2413

A/µs

td(off)

Turn-off-delay

time

142

Current fall

time

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