STPS3045C datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Characteristics

STPS3045C

4/13

DocID3510 Rev 9

1.2

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 6: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

(W )

F (AV)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ = tp/T

IF(AV)(A)

(A)

F(AV)

2 5

5 0

7 5

100

125

150

175

Tamb(°C)

δ =tp/T

= 15°C/W

th(j-a)

R th(j-c)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

t (s)

δ = tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

C (nF)

100

1000

10000

100

VR(V)

F = 1 M H z

OSC

= 30 mV

RMS

T = 25 °C

1.E -01

1.E +00

1.E +01

1.E +02

1.E +03

1.E +04

1.E +05

I (µA)

T = 150°C

T = 125°C

T = 100°C

T = 75°C

T = 50°C

T = 25°C

V ( V)

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