NTHD4P02F datasheet(4/8 Pages) ONSEMI

4 / 8 page

NTHD4P02F

http://onsemi.com

TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VDS = 0 V

VGS = 0 V

600

300

200

100

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

TJ = 25°C

COSS

CISS

CRSS

500

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

400

−VGS

−VDS

0.9

0.5

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

VGS = 0 V

TJ = 25°C

2.5

0.7

0.5

0.3

1.5

−VGS

QG, TOTAL GATE CHARGE (nC)

ID = −2.1 A

TJ = 25°C

QGD

QGS

−VDS

100

1000

100

td(OFF)

td(ON)

VDD = −16 V

ID = −2.1 A

VGS = −4.5 V

t, TIME (s)

Figure 11. Thermal Response

1.0

0.1

0.01

0.2

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

1.0E−03

1.0E−02

1.0E−01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

0.02

0.0175 W

0.0710 W

0.2706 W

0.5776 W

0.7086 W

107.55 F

1.7891 F

0.3074 F

0.0854 F

0.0154 F

Chip

Ambient

Normalized to qja at 10s.

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