SSM9577 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSM9577

-3.8A, -60V, RDS(O ) 85mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

24-May-2017 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

BVDSS

-60

VGS=0, ID= -250uA

Gate Threshold Voltage

VGS(th)

-1

-2.5

VDS=VGS, ID= -250uA

Gate-Source Leakage Current

IGSS

±100

VGS=±20V

-1

VDS= -48V, VGS=0, TJ=25°C

Drain-Source Leakage Current

IDSS

-5

VDS= -48V, VGS=0, TJ=55°C

VGS= -10V, ID= -3A

Static Drain-Source On-Resistance

RDS(ON)

105

VGS= -4.5V, ID= -2A

Total Gate Charge

11.8

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

6.5

ID= -3A

VDS= -20V

VGS= -4.5V

Turn-On Delay Time

Td(on)

8.8

Rise Time

19.6

Turn-Off Delay Time

Td(off)

47.2

Fall Time

9.6

VDS= -15V

ID= -1A

VGS= -10V

RG=3.3

Input Capacitance

Ciss

1080

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS=0

VDS= -15V

f=1MHz

Source-Drain Diode

Forward On Voltage

VSD

-1.2

IS= -1A, VGS=0V

Continuous Source Current

-3.8

Pulsed Source Current

ISM

-8

Notes:

Surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

When mounted on Min. copper pad.

The power dissipation is limited by 150°C junction temperature.

The data tested by pulsed, Pulse width ≦ 300us, Duty cycle ≦ 2%.

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