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Hello, Please ask a question about IRF340 Datasheet
# Example questions:
➢ What is the maximum drain-source breakdown voltage (v(br)dss) for the mtm8n40 mosfet, as specified in the datasheet?
➢ What are the test conditions used to measure the switching characteristics (td(on), tr, td(off), tf) of the mtm8n35/mtm8n40 mosfets?
➢ What is the typical input capacitance (ciss) for the irf340-343/irf740-743 mosfets, as specified in the datasheet?
Device Information:
️· Part Numbers: IRF340, IRF341, IRF740, IRF741, MTM8N35, MTM8N40
️· Type: N-Channel Power MOSFETs
️· Voltage Rating (VDS): 350V to 400V (depending on specific part)
️· Current Rating (ID): Up to 10A to 12A (depending on specific part)
️· Operating Temperature: Tj = +25°C to +150°C
Electrical Characteristics (Key Values - Vary by part number, see below for important notes):
️· VDS(on) (Drain-Source On-Voltage): Varies depending on ID and VGS, generally around 2.2V to 5.3V. Specific numbers are listed in tables on pages 3 and 5.
️· gfs (Forward Transconductance): 3.0 to 4.0 S
️· Ciss (Input Capacitance): ~1600 - 1800 pF
️· Coss (Output Capacitance): ~350 pF
️· Crss (Reverse Transfer Capacitance): ~150 pF
️· Qg (Total Gate Charge): ~60 nC
️· td(on) (Turn-On Delay Time): ~35-60ns
️· tr (Rise Time): ~15-150ns
️· td(off) (Turn-Off Delay Time): ~90-200ns
️· tf (Fall Time): ~35-120ns
️· VSD (Diode Forward Voltage): ~1.9V to 2.0V
️· trr (Reverse Recovery Time): 600ns
Important Notes & Differences Between Part Numbers:
️· The provided text includes multiple part numbers, and electrical characteristics *vary* between them. Carefully examine the tables on pages 3 & 5 to select the correct parameters for the specific part number you're using.
️· The parameters listed are often provided at specific test conditions (VGS, ID, temperature, etc.).
️· Some parameters (like VDS(on)) are dependent on the gate-source voltage (VGS) and the drain current (ID).
️· There is additional detail in tables available on pages 3 and 5 that are not fully presented here. These tables define key specs for different parts.
️· The text mentions a "Forward Biased Safe Operating Area" – refer to Figure 7 for details.
Test Conditions (Typical):
️· Temperature: Tc = 25°C unless otherwise noted.
️· Pulse Testing: Used for some parameters (like Qg) with specific pulse width and duty cycle.
️· Switching Measurements: Made using LEM TR-58 test equipment.
Where to find more information:
️· Pages 3 & 5: Contain comprehensive tables of electrical characteristics.
️· Figures 1-10: Provide graphical representations of performance (e.g., Output Characteristics, Safe Operating Area, Switching Waveforms).
This summary should provide a good overview of the provided documentation. Remember to consult the full document and the tables for precise values for your particular application.
Device Information:
️· Part Numbers: IRF340, IRF341, IRF740, IRF741, MTM8N35, MTM8N40
️· Type: N-Channel Power MOSFETs
️· Voltage Rating (VDS): 350V to 400V (depending on specific part)
️· Current Rating (ID): Up to 10A to 12A (depending on specific part)
️· Operating Temperature: Tj = +25°C to +150°C
Electrical Characteristics (Key Values - Vary by part number, see below for important notes):
️· VDS(on) (Drain-Source On-Voltage): Varies depending on ID and VGS, generally around 2.2V to 5.3V. Specific numbers are listed in tables on pages 3 and 5.
️· gfs (Forward Transconductance): 3.0 to 4.0 S
️· Ciss (Input Capacitance): ~1600 - 1800 pF
️· Coss (Output Capacitance): ~350 pF
️· Crss (Reverse Transfer Capacitance): ~150 pF
️· Qg (Total Gate Charge): ~60 nC
️· td(on) (Turn-On Delay Time): ~35-60ns
️· tr (Rise Time): ~15-150ns
️· td(off) (Turn-Off Delay Time): ~90-200ns
️· tf (Fall Time): ~35-120ns
️· VSD (Diode Forward Voltage): ~1.9V to 2.0V
️· trr (Reverse Recovery Time): 600ns
Important Notes & Differences Between Part Numbers:
️· The provided text includes multiple part numbers, and electrical characteristics *vary* between them. Carefully examine the tables on pages 3 & 5 to select the correct parameters for the specific part number you're using.
️· The parameters listed are often provided at specific test conditions (VGS, ID, temperature, etc.).
️· Some parameters (like VDS(on)) are dependent on the gate-source voltage (VGS) and the drain current (ID).
️· There is additional detail in tables available on pages 3 and 5 that are not fully presented here. These tables define key specs for different parts.
️· The text mentions a "Forward Biased Safe Operating Area" – refer to Figure 7 for details.
Test Conditions (Typical):
️· Temperature: Tc = 25°C unless otherwise noted.
️· Pulse Testing: Used for some parameters (like Qg) with specific pulse width and duty cycle.
️· Switching Measurements: Made using LEM TR-58 test equipment.
Where to find more information:
️· Pages 3 & 5: Contain comprehensive tables of electrical characteristics.
️· Figures 1-10: Provide graphical representations of performance (e.g., Output Characteristics, Safe Operating Area, Switching Waveforms).
This summary should provide a good overview of the provided documentation. Remember to consult the full document and the tables for precise values for your particular application.
| Part No. | IRF340 |
| Manufacturer | ARTSCHIP |
| Size | 345 Kbytes |
| Pages | 5 pages |
| Description | N-Channel Power MOSFETs |
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