IRF340-343/IRF740-743 T-39-13

MTM8N35/8N40

N-Channel Power MOSFETs

10A, 350V/400V

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3

Electrical Characteristics

(Tc=25℃ unless otherwise noted)

Symbol

Characteristic

Min

Max

Unit

Test Conditions

Off Characteristics

400

Drain-Source Breakdown Voltage1

MTM8N40

MTM8N35

350

V

0.25

mA

Zero Gate Voltage Drain Current

2.5

mA

Gate-Body Leakage Current

±500

nA

On Characteristics

2.0

4.5

V

Gate Threshold Voltage

1.5

4.0

V

Tc=100℃

2.2

5.3

V

V

Drain-Source On-Voltage

2

4.4

V

Tc=100℃

Static Drain-Source On-Resistance

2

0.55

Ω

gfs

Forward Transconductance

3.0

S( )

Dynamic Characteristics

Ciss

Input Capacitance

1800

pF

Coss

Output Capacitance

350

pF

Crss

Reverse Transfer Capacitance

150

pF

F=1.0MHz

Switching Characteristics

(Tc=25℃, Figures 9,10)

3

td(on)

Turn-On Delay Time

60

ns

tr

Rise Time

150

ns

td(off)

Turn-Off Delay Time

200

ns

tf

Fall Time

120

ns

Qg

Total Gate Charge

60

nC

Notes

1.

2.

Pulse test: Pulse width ≤80µs, Duty cycle≤1%

3.

Switching time measurements performed on LEM TR-58 test equipment.