IRF340-343/IRF740-743 T-39-13

MTM8N35/8N40

N-Channel Power MOSFETs

10A, 350V/400V

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1

Description

These devices are n-channel, enhancement mode, power

MOSFETs designed especially for high voltage, high speed

applications, such as off-line switching power supplies, UPS,

AC and DC motor controls, relay and solenoid drivers.

Silicon Gate for Fast Switching Speeds

Temperature

Rugged

TO-204AA

IRF340

IRF341

IRF342

IRF343

MTM8N35

MTMT8N40

TO-220AB

IRF740

IRF741

IRF742

IRF743

Maximum Ratings

Symbol

Characteristic

Rating

IRF340/342

IRF740/742

MTM8N40

Rating

IRF341/343

IRF741/743

MTM8N35

Unit

Drain to Source Voltage

400

350

V

Drain to Gate Voltage

400

350

V

Gate to Source Voltage

±20

±20

V

Operating Junction Temperature

Storage Temperature

-55 to +150

-55 to +150

℃

Maximum Lead Temperature

for Soldering Purposes,

1/8” From Case for 5S

275

275

℃

Maximum On-State Characteristics

IRF340/341

IRF740/741

IRF342/343

IRF742/743

MTM8N35

MTM8N40

Static Drain-to-Source

On Resistance

0.55

0.80

0.55

Ω

Drain Current

Continuous

Pulsed

10

40

8

32

8

48

A

Maximum Thermal Characteristics

Thermal Resistance,

Junction to Case

1.0

1.0

0.83

℃

/W

Total Power Dissipation

at Tc=25℃

125

125

150

W

Notes

For Information concerning connection diagram and package outline, refer to

Section 7.