1 Features
• Drives two N-channel MOSFETs in half-bridge
configuration
• Integrated bootstrap diode
• 5-V typical undervoltage lockout on GVDD
• 107-V absolute maximum voltage on BST
• –19.5-V absolute maximum negative transient
voltage handling on SH
• 0.5-A/0.8-A peak source/sink currents
• 115-ns typical propagation delay

2 Applications
• Brushless-DC (BLDC) motors
• Permanent magnet synchronous motors (PMSM)
• Cordless vacuum cleaners
• Cordless garden and power tools
• E-bikes and e-scooters
• Battery test equipment
• Offline uninterruptible power supply (UPS)
• General-purpose MOSFET or IGBT driver

3 Description
The LM2105 is a compact, high-voltage gate driver
designed to drive both the high-side and the lowside
N-channel MOSFETs in a synchronous buck or
a half-bridge configuration. The integrated bootstrap
diode saves board space and reduces system cost by
eliminating the need for an external discrete diode.
The –1-V DC and –19.5-V transient negative
voltage handling on the SH pin improve the system
robustness in high noise applications. The small,
thermally-enhanced 8-pin WSON package improves
PCB layout by allowing the driver to be placed closer
to the motor phases. The LM2105 is also available
in an 8-pin SOIC package compatible with industry
standard pinouts. Undervoltage lockout (UVLO) is
provided on both the low-side and the high-side power
rails for protection during power up and power down.