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FCX617 Datasheet (PDF) - Diodes Incorporated

FCX617 Datasheet PDF - Diodes Incorporated
Part # FCX617
Download  FCX617 Download
File Size   87.93 Kbytes
Page   3 Pages
Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated
Description SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR

FCX617 Datasheet (PDF)

Go To PDF Page Download Datasheet
FCX617 Datasheet PDF - Diodes Incorporated

Part # FCX617
Download  FCX617 Click to download

File Size   87.93 Kbytes
Page   3 Pages
Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated
Description SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR

FCX617 Datasheet (HTML) - Diodes Incorporated


FCX617 Product details

FEATURES
* 2W POWER DISSIPATION
* 12A Peak Pulse Current
* Excellent HFE Characteristics up to 12 Amps
* Extremely Low Saturation Voltage E.g. 8mv Typ.
* Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A




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About Diodes Incorporated


Diodes Incorporated is a publicly traded company that designs, manufactures, and supplies a wide range of discrete, analog, and mixed-signal semiconductors and complete power solutions.
The company was founded in 1964 and is headquartered in Plano, Texas.
It operates globally with sales, support, and design centers in North America, Europe, and Asia.
Diodes Incorporated serves a variety of industries, including automotive, communications, computing, consumer, and industrial.
The company offers a wide range of products, including diodes, rectifiers, transistors, voltage regulators, MOSFETs, LED drivers, and protection devices, among others.
The company's mission is to provide customers with high-quality, high-reliability products and excellent customer service.
With a focus on innovation and customer satisfaction, Diodes Incorporated is committed to becoming a leading provider of power management solutions.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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