DESCRIPTION
The NE68519 / 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is a proprietary fabrication technique.

FEATURES
• Low Voltage Use.
• High fT : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
• Low Cre : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)
• High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.