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NCP4545IMNTWG Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCP4545IMNTWG
Description  ecoSwitch Advanced Load Management
PDF  11 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP4545IMNTWG Datasheet(HTML) 2 Page - ON Semiconductor

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NCP4545
www.onsemi.com
2
PIN DESCRIPTION
Pin
Name
Function
1
DELAY
Turn−on delay adjustment
2
VCC
Supply voltage to controller (3.0 V − 5.5 V)
3
GND
Controller ground
4, 5, 9−14, 18, 19
VIN
Drain of MOSFET (0.5 V − 6.0 V)
6−8
VOUT
Source of MOSFET connected to load
15
BLEED
Load bleed connection
16
EN
NCP4545IMNTWG − Active−High digital input used to turn on the MOSFET, pin
has an internal pull down resistor to GND
NCP4545IMNTWG−L − Active−Low digital input used to turn on the MOSFET,
pin has an internal pull up resistor to VCC
17
SR
Slew rate adjustment
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage Range
VCC
−0.3 to 6
V
Input Voltage Range
VIN
−0.3 to 6
V
Output Voltage Range
VOUT
−0.3 to 6
V
EN Digital Input Range
VEN
−0.3 to (VCC + 0.3)
V
Thermal Resistance, Junction−to−Air (Note 1)
RqJA
49.9
°C/W
Thermal Resistance, Junction−to−Air (Note 2)
RqJA
32.8
°C/W
Thermal Resistance, Junction−to−Case (VIN Paddle)
RqJC
3.3
°C/W
Continuous MOSFET Current (Note 3)
IMAX
10.5
A
Total Power Dissipation @ TA = 25°C (Notes 1 and 4)
Derate above TA = 25°C
PD
1.30
20.1
W
mW/
°C
Total Power Dissipation @ TA = 25°C (Notes 2 and 4)
Derate above TA = 25°C
PD
1.98
30.5
W
mW/
°C
Storage Temperature Range
TSTG
−40 to 150
°C
Lead Temperature, Soldering (10 sec.)
TSLD
260
°C
ESD Capability, Human Body Model (Notes 5 and 6)
ESDHBM
4.0
kV
ESD Capability, Machine Model (Note 5)
ESDMM
200
V
ESD Capability, Charged Device Model (Note 5)
ESDCDM
1
kV
Latch−up Current Immunity (Note 5)
LU
100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Current limited by package.
4. Specified for derating purposes only, ensure that IMAX is never exceeded.
5. Tested by the following methods @ TA = 25°C:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per EIA/JESD22−A115
ESD Charged Device Model per EIA/JESD22−C101
Latch−up Current Maximum Rating:
≤100 mA per JEDEC standard: JESD78
6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.



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