FSA3000 datasheet(5/14 Pages) ONSEMI

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FSA3000 • Rev. 1.10

DC Electrical Characteristics

All typical value are at TA=25°C unless otherwise specified.

Symbol

Parameter

Condition

VCC (V)

TA= -40ºC to +85ºC

Unit

Min.

Typ.

Max.

VIK

Clamp Diode Voltage

IIN=-18 mA

2.7

-1.2

VIH

Control Input Voltage High

SEL, /OE

2.7 to 4.3

1.25

VIL

Control Input Voltage Low

SEL, /OE

2.7 to 4.3

0.6

IIN

Control Input Leakage

VSW=0 to 3.6 V,

VCNTRL=0 to VCC

4.3

-500

500

IOZ(MHL)

Off-State Leakage for Open

MHLn Data Paths

VSW=1.65 MHL 3.45 V

4.3

-500

500

IOZ(USB)

Off-State Leakage for Open

USBn Data Paths

VSW=0 USB 3.6 V

4.3

-500

500

ICL(MHL)

On-State Leakage for Closed

MHLn Data Paths

(6)

VSW=1.65 MHL 3.45 V

4.3

-500

500

ICL(USB)

On-State Leakage for Closed

USBn Data Paths

(6)

VSW=0 USB 3.6 V

4.3

-500

500

IOFF

Power-Off Leakage Current

(All I/O Ports)

VSW=0 V or 3.6 V, Figure 4

-500

500

RON(USB)

HS Switch On Resistance

(USB to Dn Path)

VSW=0.4 V, ION=-8 mA,

Figure 3

2.7

3.5

4.8



RON(MHL)

HS Switch On Resistance

(MHL to Dn Path)

VSW=VCC-1050 mV,

ION=-8 mA, Figure 3

2.7

4.7

6.0



∆RON(MHL)

Difference in RON Between

MHL Positive-Negative

VSW=VCC-1050 mV,

ION=-8 mA, Figure 3,

2.7

0.03



∆RON(USB)

Difference in RON Between

USB Positive-Negative

VSW=0.4V, ION=-8mA,

Figure 3

2.7

0.18



RONF(MHL) Flatness for RON MHL Path

VSW=1.65 to 3.45 V,

ION=-8 mA, Figure 3

2.7

0.9



ICC

Quiescent Supply Current

V/OE=0, VSEL=0 or VCC,

IOUT=0

4.3

µA

ICCZ

Quiescent Supply Current

(High Impedance)

VSEL=X, V/OE=VCC,

IOUT=0

4.3

µA

ICCT

Increase in Quiescent Supply

Current

VSEL=X, V/OE =1.65 V

4.3

µA

Note:

For this test, the data switch is closed with the respective switch pin floating.

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