IXTT76P10THV datasheet(4/7 Pages) IXYS

4 / 7 page

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTT76P10THV IXTA76P10T

IXTP76P10T

IXTH76P10T

Fig. 7. Input Admittance

-140

-120

-100

-80

-60

-40

-20

-7.0

-6.5

-6.0

-5.5

-5.0

-4.5

-4.0

-3.5

-3.0

VGS - Volts

TJ = 125

- 40

VDS = -10V

Fig. 8. Transconductance

100

-160

-140

-120

-100

-80

-60

-40

-20

ID - Amperes

TJ = - 40

125

VDS = -10V

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-240

-200

-160

-120

-80

-40

-1.5

-1.4

-1.3

-1.2

-1.1

-1.0

-0.9

-0.8

-0.7

-0.6

-0.5

-0.4

VSD - Volts

TJ = 125

TJ = 25

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

100

120

140

160

180

200

QG - NanoCoulombs

VDS = - 50V

I D = - 38A

I G = -1mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

-40

-35

-30

-25

-20

-15

-10

-5

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

100

1,000

110

100

VDS - Volts

TJ = 150

TC = 25

Single Pulse

25µs

1ms

100µs

RDS(on) Limit

10ms

100ms

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