www.sinopowersemi.com

2

SM2360NSA

®

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.2 - April, 2014

Symbol

Parameter

Rating

Unit

Drain-Source Voltage

60

Gate-Source Voltage

±20

V

Maximum Junction Temperature

150

Storage Temperature Range

-55 to 150

°C

Diode Continuous Forward Current

1.5

A

2.7

Continuous Drain Current

2.2

A

a

Pulsed Drain Current

11

A

1.56

Maximum Power Dissipation

1

W

t

£ 10s

80

°C/W

c

Thermal Resistance-Junction to Ambient

Steady State

125

°C/W

b

Avalanche Current, Single pulse (L=0.5mH)

5

A

b

Avalanche Energy, Single pulse (L=0.5mH)

6

mJ

Note a: Pulse width is limited by maximum junction temperature.

b: UIS tested and pulse width are limited by maximum junction temperature 150°C (initial temperature Tj=25°C ).

c: Surface Mounted on 1in

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

Drain-Source Breakdown Voltage

60

-

-

V

-

-

1

Zero Gate Voltage Drain Current

-

-

30

mA

Gate Threshold Voltage

1

2.3

3

V

Gate Leakage Current

-

-

±100

nA

-

87

104

m

W

d

Drain-Source On-state Resistance

100

130

m

W

Diode Characteristics

d

Diode Forward Voltage

-

0.8

1.3

V

Reverse Recovery Time

-

17

-

ns

Reverse Recovery Charge

-

14

-

nC