EMFA0P02JS datasheet(2/5 Pages) EXCELLIANCE

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2015/7/15

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EMFA0P02JS

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = ‐250A

‐20

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = ‐250A

‐0.3 ‐0.75

‐1.2

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±12V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = ‐16V, VGS = 0V

‐1

A

VDS = ‐16V, VGS = 0V, TJ = 125 °C

‐10

On‐State Drain Current

ID(ON)

VDS = ‐5V, VGS = ‐4.5V ‐3.4

Drain‐Source On‐State Resistance

RDS(ON)

VGS = ‐4.5V, ID = ‐3.4A

100

mΩ

VGS = ‐2.5V, ID = ‐2.5A

110

135

Forward Transconductance

gfs

VDS = ‐5V, ID = ‐3A

4.5

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = ‐10V, f = 1MHz

450

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

1,2

VDS = ‐10V, VGS = ‐4.5V,

ID = ‐3A

5.4

Gate‐Source Charge

1,2

Qgs

1.0

Gate‐Drain Charge

1,2

Qgd

1.3

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = ‐10V,

Turn‐Off Delay Time

1,2

td(off)

ID = ‐1A, VGS = ‐4.5V, RGS = 6Ω

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

‐2

Pulsed Current

ISM

‐8

Forward Voltage

VSD

IF = IS, VGS = 0V

1.2

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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