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FDR751E Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FDR751E Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() SCHOTTKY BARRIER DIODE MAXIMUM RATINGS (TA = 25 C) Parameter Symbol Limits Unit V e g a t l o v e s r e v e r k a e P RM 40 V V e g a t l o v e s r e v e r C D R 30 V I t n e r r u c g n i y f i t c e r n a e M O 30 mA Peak forward surge current IFSM 200 mA T e r u t a r e p m e t n o i t c n u J j 125 C T e r u t a r e p m e t e g a r o t S stg -40~+125 C ELECTRICAL CHARACTERISTICS(TA= 25 C) Parameter Symbol Min. Typ Max. Unit Conditions V e g a t l o v d r a w r o F F - - 0.37 V I F=1mA I t n e r r u c e s r e v e R R - - 0.5 µA VR=30V Capacitance between terminals C T - 2.0 - pF V R=1V,f=1MHz DEVICE MARKING FDR751T1G= 5 Features (1)Small surface mounting type SC-79/SOD-523 (2)Low reverse current and low forward voltage. (3)High reliability Construction Silicon epitaxial planar 1 CATHODE 2 ANODE Ordering Information Device Marking Shipping FDR751ET1G 5 3000/Tape&Reel FDR751ET3G 5 10000/Tape&Reel We declare that the material of product compliance with RoHS requirements. SEMICONDUCTOR TECHNICAL DATA FDR751E 2009. 6. 25 1/3 Revision No : 0 |
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