2016. 4. 23

1/4

SEMICONDUCTOR

TECHNICAL DATA

FDR1020E

Revision No : 0

SCHOTTKY BARRIER DIODE

FEATURES

MARKING:

The marking bar indicates the cathode

SOD-523



Low Forward Voltage Drop



Surface Mount Package Ideally Suited For Automatic Insertion

L6

℃ unless otherwise noted)

a

r

a

P

l

o

b

m

y

S

mete

t

i

m

i

L

r

Unit

Repetitive Peak Reverse Voltage

20

V

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

14

V

Forward Continuous Current

1.0

A

Non-repetitivePeak Forward Surge Current @t=8.3ms

4

A

Power Dissipation

150

mW

Thermal Resistance from Junction to Ambient

667

℃/W

Junction temperature

125

℃

Storage Temperature

-55 ~ +150

℃

Parameter

Symbol

Test

Condition

Min

Typ

Max

Unit

Reverse breakdown voltage

μA

V

Reverse current

μA

Forward voltage

100

20

V

μA

Capacitance between terminals

V

V

V

0.23

0.305

0.50

80

pF

120