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2SC5200N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SC5200N
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC5200N Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SC5200N
DESCRIPTION
·
High Current Capability
·
High Power Dissipation
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 230V(Min)
·
Complement to Type 2SA1943N
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Power amplifier applications
·
Recommend for 100W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
1.5
A
PC
Collector Power Dissipation
@ TC=25℃
150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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