PESD5V0V1BCSF datasheet(4/13 Pages) NEXPERIA

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PESD5V0V1BCSF

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Product data sheet

Rev. 1 — 2 September 2011

4 of 13

Nexperia

PESD5V0V1BCSF

Bidirectional very low capacitance ESD protection diode

Characteristics

[1]

Non-repetitive current pulse 8/20

s exponential decay waveform according to IEC 61000-4-5;

see Figure 1.

[2]

Measured from pin 1 to pin 2.

[3]

Breakdown voltage is always symmetrical within the characterized range, which means no difference in

breakdown voltage from pin 1 to pin 2 and vice versa.

[4]

This parameter is guaranteed by design.

[5]

Calculated from S-parameter values.

[6]

Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;

ANS/IESD STM5.1-2008.

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VRWM

reverse standoff

voltage

5-

IRM

reverse leakage

current

VRWM = 5 V

100

VCL

clamping voltage

IPP =0.5 A

[1][2] --

11.5

IPP =1A

[1][2] -

12.8

VBR

breakdown voltage

IR =1mA

[3] 6-

IR = 1mA

[3]

10

6V

diode capacitance

f = 1 MHz

[4]

VR = 0 V

5.3

VR = 2.5 V

4.3

VR = 5 V

4.1

4.7

series inductance

[5] -0.05

Rdyn

dynamic resistance

[6] -2.5



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