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ISCN283N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN283N Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor ISCN283N DESCRIPTION · High Breakdown Voltage- : VCEO= 1500V (Min) · High Switching Speed · High Reliability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Color TV horizontal deflection output · Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A ICP Collector Current-Pulse 10 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Similar Part No. - ISCN283N |
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Similar Description - ISCN283N |
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