AO4607 datasheet(3/8 Pages) AOSMD

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AO4607

Symbol

Min

Typ

Max

Units

BVDSS

0.007

0.05

3.2

IGSS

100

VGS(th)

1.9

ID(ON)

22.5

TJ=125°C

31.3

34.5

Ω

gFS

15.4

VSD

0.45

0.5

5.5

Ciss

680

820

Coss

131

Crss

3.6

Ω

Qg(10V)

13.84

16.6

Qg(4.5V)

6.74

Qgs

1.82

Qgd

3.2

tD(on)

4.6

4.1

tD(off)

20.6

5.2

trr

13.7

16.5

Qrr

4.1

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Body-Diode+Schottky Continuous Current

DYNAMIC PARAMETERS

Body-Diode+Schottky Reverse Recovery Charge

Total Gate Charge

IF=6.9A, dI/dt=100A/µs

Turn-Off DelayTime

Turn-Off Fall Time

Body-Diode+Schottky Reverse Recovery Time

IF=6.9A, dI/dt=100A/µs

Input Capacitance

N-Channel + Schottky Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current.

(Set by Schottky leakage)

VR=30V

Gate-Body leakage current

VDS=0V, VGS=±20V

VR=30V, TJ=125°C

VR=30V, TJ=150°C

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=4.5V, VDS=5V

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Ω

VGS=4.5V, ID=5.0A

VDS=5V, ID=6.9A

IS=1A

VGS=10V, ID=6.9A

Body-Diode+Schottky Forward Voltage

VGS=10V, VDS=15V, RL=2.2Ω,

RGEN=3Ω

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Total Gate Charge

VGS=10V, VDS=15V, ID=6.9A

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Reverse Transfer Capacitance

Gate resistance

Output Capacitance (FET+Schottky)

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The value in any

given application depends on the user's specific board design. The current rating is based on the t

≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA curve provides

a single pulse rating.

F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance

and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately

Rev 4: Sept 2005

Alpha Omega Semiconductor, Ltd.

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