2N7002K datasheet(3/5 Pages) TUOFENG

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,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

2N7002K

0.2

0.4

0.6

0.8

1.0

DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

DS ,

1.2

1.4

10V

= 10V

, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

0.01

0.10

1.00

1.5

2.5

33.5

4.5

= 125 C

T= 25 C

= -25 C

T= 75 C

= 10V

Pulsed

, CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Tem perature

0.5

1.5

-50

-25

100

125

150

= 10V

I = 1mA

Pulsed

0.1

DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

Vs. Drain Current

0.001

0.01

0.1

T= 150 C

T= 125 C

T= 85 C

T= -55 C

= 25 C

T= 0 C

T= -25 C

= 10V

Pulsed

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

0.1

0.001

0.01

0.1

V= 5V

Pulsed

T= 150 C

T= 125 C

T= 85 C

T= -55 C

T= 25 C

T= -25 C

T= 0 C

GATE SOURCE VOLTAGE (V)

Fig. 6 Static Drain-Source On-Resistance

vs. Gate-Source Voltage

GS,

I = 300mA

I = 150mA

T = 25 C

Pulsed

Typical Characteristics

Mar

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