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STP50N65DM6 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP50N65DM6
Description  N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP50N65DM6 Datasheet(HTML) 1 Page - STMicroelectronics

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1
2
3
TO-220
TAB
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order code
VDS
RDS(on) max.
ID
STP50N65DM6
650 V
91 mΩ
33 A
•
Fast-recovery body diode
•
Lower RDS(on) per area vs previous generation
•
Low gate charge, input capacitance and resistance
•
100% avalanche tested
•
Extremely high dv/dt ruggedness
•
Zener-protected
Applications
•
Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STP50N65DM6
Product summary
Order code
STP50N65DM6
Marking
50N65DM6
Package
TO-220
Packing
Tube
N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET
in a TO-220 package
STP50N65DM6
Datasheet
DS12360 - Rev 4 - July 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


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