CSLZ Series

2022-05-24

Rev.1.0

© 2022

Toshiba Electronic Devices & Storage Corporation

1

TOSHIBA Zener Diode Silicon Epitaxial Planar Type

CSLZ Series

Applications

Voltage surge protection

Features

• Small package

Packaging and Internal Circuit

Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Power dissipation

PD

*1

150

mW

PD

*2

400

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to 150

°C

Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25°C)

Type No.

Electrostatic discharge voltage

*3

Peak pulse

power *4

Peak pulse

current*4

Type No.

Electrostatic discharge voltage

*3

Peak pulse

power *4

Peak pulse

current*4

Contact

Air

Contact

Air

VESD(kV)

PPK(W)

IPP(A)

VESD(kV)

PPK(W)

IPP(A)

CSLZ5V6

± 30

32

2.5

CSLZ12V

± 20

72

2.5

CSLZ6V2

± 30

37

2.5

CSLZ16V

± 12

87

2.5

CSLZ6V8

± 30

40

2.5

CSLZ20V

± 12

105

2.5

CSLZ8V2

± 30

55

2.5

CSLZ24V

± 10

117

2.5

CSLZ10V

± 30

60

2.5

CSLZ30V

± 8

145

2.5

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate

reliability upon reviewing the Toshiba Semic

onductor Reliability Handbook (“Handling Precautions”/“Derating Concept

and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

*1:

Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm.

*2:

Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mmt, Cu pad: 645 mm2

*3:

according to IEC61000-4-2

*4:

according to IEC61000-4-

5, tp = 8 / 20 μs

Start of commercial production

2022-04

SL2

1: Cathode

2: Anode

1

2