1999 Apr 08

2

Philips Semiconductors

Product specification

NPN medium power transistor

BCP68

FEATURES

• High current (max. 1 A)

• Low voltage (max. 20 V).

APPLICATIONS

• General purpose switching and amplification under high

current conditions.

DESCRIPTION

NPN medium power transistor in a SOT223 plastic

package. PNP complement: BCP69.

PINNING

PIN

DESCRIPTION

1

base

2, 4

collector

3

emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

4

12

3

MAM287

Top view

3

2, 4

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

32

V

collector-emitter voltage

open base

−

20

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

2A

peak base current

−

200

mA

total power dissipation

−

1.37

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C