BCP68 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN medium power transistor

BCP68

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =25V

−−

100

IE = 0; VCB = 25 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 5 mA; VCE =10V

−−

IC = 500 mA; VCE = 1 V; see Fig.2

−

375

IC = 1 A; VCE = 1 V; see Fig.2

−−

DC current gain

IC = 500 mA; VCE = 1 V; see Fig.2

BCP68-25

160

−

375

VCEsat

collector-emitter saturation voltage IC = 1 A; IB = 100 mA

−−

500

VBE

base-emitter voltage

IC = 5 mA; VCE =10V

−

620

−

IC = 1 A; VCE =1V

−−

collector capacitance

IE =ie = 0; VCB =5V; f=1MHz

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

−−

MHz

DC current gain ratio of the

complementary pairs

I

C = 0.5 A; VCE =1V

−−

1.6

FE1

FE2

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