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2SC5778 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SC5778
Description  Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC5778 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
2SC5778
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= 800V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat):3.0V(Max) @IC= 10.8A
APPLICATIONS
· Designed for power amplifier,high speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1600
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Pulse
35
A
PC
Total Power Dissipation
@ TC=25℃
85
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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