CSD17577Q3A

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SLPS515A – AUGUST 2014 – REVISED JANUARY 2016

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, ID = 250 μA

30

V

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 24 V

1

μA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 20 V

100

nA

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, ID = 250 μA

1.1

1.4

1.8

V

VGS = 4.5 V, ID = 10 A

5.3

6.4

m

Ω

RDS(on)

Drain-to-source on-resistance

VGS = 10 V, ID = 16 A

4.0

4.8

m

Ω

gfs

Transconductance

VDS = 15 V, ID = 16 A

76

S

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

1780

2310

pF

Coss

Output capacitance

VGS = 0 V, VDS = 15 V, ƒ = 1 MHz

208

270

pF

Crss

Reverse transfer capacitance

79

103

pF

RG

Series gate resistance

1.4

2.8

Ω

Qg

Gate charge total (4.5 V)

13

17

nC

Qg

Gate charge total (10 V)

27

35

nC

Qgd

Gate charge gate-to-drain

VDS = 15 V, ID = 16 A

2.8

nC

Qgs

Gate charge gate-to-source

5.1

nC

Qg(th)

Gate charge at Vth

2.5

nC

Qoss

Output charge

VDS = 15 V, VGS = 0 V

6

nC

td(on)

Turn on delay time

4

ns

tr

Rise time

31

ns

VDS = 15 V, VGS = 10 V,

IDS = 16 A, RG = 0 Ω

td(off)

Turn off delay time

20

ns

tf

Fall time

4

ns

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 16 A, VGS = 0 V

0.8

1

V

Qrr

Reverse recovery charge

8.2

nC

VDS= 15 V, IF = 16 A,

di/dt = 300 A/

μs

trr

Reverse recovery time

8.6

ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-case thermal resistance(1)

3.0

°C/W

RθJA

Junction-to-ambient thermal resistance(1)(2)

55

°C/W

(1)

RθJC is determined with the device mounted on a 1 inch

2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5 inches

(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board

design.

(2)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

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