0

2

4

6

8

10

12

14

16

18

20

0

2

4

6

8

10

12

14

16

18

20

VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 16A

TC = 125°C,I D = 16A

G001

0

1

2

3

4

5

6

7

8

9

10

0

3

6

9

12

15

18

21

24

27

30

Qg - Gate Charge (nC)

ID = 16A

VDS = 15V

G001

1

D

2

D

3

D

4

D

D

5

G

6

S

7

S

8

S

P0093-01

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

Reference

Design

CSD17577Q3A

SLPS515A – AUGUST 2014 – REVISED JANUARY 2016

CSD17577Q3A 30 V N-Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

Low Qg and Qgd

TA = 25°C

TYPICAL VALUE

UNIT

•

Low Thermal Resistance

VDS

Drain-to-Source Voltage

30

V

•

Avalanche Rated

Qg

Gate Charge Total (4.5 V)

12

nC

Qgd

Gate Charge Gate-to-Drain

2.5

nC

•

Pb Free

VGS = 4.5 V

5.3

m

Ω

•

RoHS Compliant

RDS(on)

Drain-to-Source On-Resistance

VGS = 10 V

4.0

m

Ω

•

Halogen Free

VGS(th)

Threshold Voltage

1.4

V

•

SON 3.3 mm × 3.3 mm Package

Ordering Information(1)

2 Applications

DEVICE

QTY

MEDIA

PACKAGE

SHIP

•

Point-of-Load Synchronous Buck in Networking,

CSD17577Q3A

2500

13-Inch Reel

SON 3.3 × 3.3 mm

Tape and

Telecom, and Computing Systems

Plastic Package

Reel

CSD17577Q3AT

250

7-Inch Reel

•

Optimized for Control, and Sync FET Applications

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

Absolute Maximum Ratings

This 30 V, 4.0 m

Ω, SON 3.3 mm × 3.3 mm

NexFET™ power MOSFET is designed to minimize

TA = 25°C

VALUE

UNIT

resistance in power conversion applications.

VDS

Drain-to-Source Voltage

30

V

VGS

Gate-to-Source Voltage

±20

V

Top Icon

Continuous Drain Current (Package limited)

35

Continuous Drain Current (Silicon limited),

ID

83

A

TC = 25°C

Continuous Drain Current (1)

19

IDM

Pulsed Drain Current (2)

239

A

Power Dissipation(1)

2.5

PD

W

Power Dissipation, TC = 25°C

53

TJ,

Operating Junction Temperature,

–55 to 150

°C

Tstg

Storage Temperature

Avalanche Energy, single pulse

EAS

39

mJ

ID = 28 A, L = 0.1 mH, RG = 25 Ω

(1) Typical RθJA = 50°C/W on a 1 inch

2, 2 oz. Cu pad on a

0.06 inch thick FR4 PCB.

(2) Max RθJC = 3.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.