BUV20 datasheet(1/4 Pages) STMICROELECTRONICS

Part #	BUV20

Description	HIGH CURRENT NPN SILICON TRANSISTOR

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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BUV20

HIGH CURRENT NPN SILICON TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPE

s

NPN TRANSISTOR

s

HIGH CURRENT CAPABILITY

s

FAST SWITCHING SPEED

s

HIGH RUGGEDNESS

APPLICATIONS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

s

SWITCHING REGULATORS

DESCRIPTION

The BUV20 is silicon Multiepitaxial Planar NPN

transistor mounted in jedec TO-3 metal case. It is

intended

for

use

in

switching

and

linear

applications in military and industrial equipment.

INTERNAL SCHEMATIC DIAGRAM

January 2000

1

2

TO-3

(version "S")

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

160

V

VCER

Collector-Emitter Voltage (RBE = 100

Ω)

150

V

VCEX

Collector-Emitter Voltage (VBE = -1.5V)

160

V

VCEO

Collector-Emitter Voltage (IB = 0)

125

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IC

Collector Current

50

A

ICM

Collector Peak Current

60

A

IB

Base Current

10

A

Ptot

Total Power Dissipation at Tcase

≤ 25 oC

250

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Junction Temperature

200

oC

®

1/4

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