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RF2369PCBA-41X Datasheet(PDF) 2 Page - RF Micro Devices

Part # RF2369PCBA-41X
Description  3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER
PDF  12 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2369PCBA-41X Datasheet(HTML) 2 Page - RF Micro Devices

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RF2369
Rev B3 DS070816
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +8.0
V
DC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
TAMB=25°C, VCC=3.0V
Frequency Range
150
824 to 894
2500
MHz
Cellular Low Noise Amplifier
Frequency
869
894
MHz
HIGH GAIN MODE
Gain Select<0.8V, VPD/VREF=3V
Gain
14.0
15.5
17.0
dB
Noise Figure
1.6
2.0
dB
Input IP3
9.0
11.5
dBm
Input VSWR
2:1
Output VSWR
2:1
Current Drain
7.5
10.0
mA
BYPASS MODE
Gain Select>1.8V, VPD/VREF=0V
Gain
-3
-2
-1
dB
Input IP3
+10
+24
dBm
Input VSWR
2:1
Output VSWR
2:1
Current Drain
2.0
4.0
mA
Cellular CDMA Driver
Frequency
824
849
MHz
HIGH GAIN MODE
Gain Select<0.8V, VPD/VREF=3V
Gain
14.0
15.5
17.0
dB
Noise Figure
2.0
2.5
dB
Output Power
4
dBm
ACPR1
-65
dBc/30kHz
POUT=+4dBm, +885kHz offset
ACPR2
-70
dBc/30kHz
POUT=+4dBm, +1.98MHz offset
Input VSWR
2:1
Output VSWR
2:1
Current Drain
8.5
mA
BYPASS MODE
Gain Select>1.8V, VPD/VREF=0V
Gain
-3.0
-2.0
-1.0
dB
Input IP3
+10
+24
dBm
Input VSWR
2:1
Output VSWR
2:1
Current Drain
2.0
4.0
mA
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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