1 of 12
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
2
GND1
3
RF IN
4
RF OUT
5
GND2
Logic
Control
1
VREF/PD
SELECT
6
RF2369
3V LOW NOISE AMPLIFIER/
3V PA DRIVER AMPLIFIER
The RF2369 is a switchable low noise amplifier with a very high dynamic
range designed for digital cellular applications. The device functions as an
outstanding front end low noise amplifier. When used as an LNA, the bias
current can be set externally. When used as a PA driver, the IC can operate
directly from a single cell Li-ion battery and includes a power down feature
that can be used to completely turn off the device. The IC is featured in a
standard SOT 6-lead plastic package.
Features
Low Noise and High Intercept
Point
Adjustable Bias Current
LNA Bypass Loss is +2dB
150MHz to 2500MHz Opera-
tion
Meets IMD Tests with Two
Gain States/Single Logic Con-
trol Line
Applications
CDMA/Cellular Bypass LNA
CDMA/Cellular Bypass Driver
Amplifier
General Purpose Amplifica-
tion
Commercial and Consumer
Systems
RF2369
3V Low Noise Amplifier/ 3V PA Driver Amplifier
RF2369PCBA-41X
Fully Assembled Evaluation Board (LNA)
Rev B3 DS070816
RoHS Compliant & Pb-Free Product
Package Style: SOT 6-Lead
Indian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
