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AP100N08CMP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100N08CMP
Description  80V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100N08CMP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N08CMP
80V N-Channel Enhancement Mode MOSFET
AP100N08CMP REV1.1
永源微電子科技有限公司
Description
The AP100N08CMP is silicon N-channel Enhanced
VDMOSFET, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 80V ID =100A
RDS(ON) < 15mΩ @ VGS=10V （Type：13mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N08CMP
TO-247-3L
AP100N08CMP XXX YYYY
1980
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
100
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
70
A
IDM
Pulsed Drain Current
480
A
EAS
Single Pulse Avalanche Energy
1054
mJ
IAS
Avalanche Current
60
A
PD@TC=25℃
Total Power Dissipation4
300
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
RθJA
Thermal Resistance Junction-Ambient
0.50
℃
/W
RθJC
Thermal Resistance Junction-Case
40
℃
/W


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