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ISCF80132 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF80132 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISCF80132 eq C2M0040120D SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage With Low On-Resistance · High Speed Switching With Low Capacitances · Easy to Parallel and Sinple to Drive APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · DC-DC Converters · Induction Heating And Welding Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGSS Gate-Source Opetation Voltage -10/+25 V ID Drain Current-Continuous 55 A Drain Current-Continuous@Tc=100℃ 36 A IDM Drain Current-Single Pluse 160 A PD Total Dissipation @TC=25℃ 278 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.45 ℃ /W |
Similar Part No. - ISCF80132 |
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Similar Description - ISCF80132 |
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