SMLVT3V3 datasheet(2/4 Pages) STMICROELECTRONICS

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SMLVT3V3

2/4

I F

V F

VCL

VBR

VRM

I PP

I RM

Symbol

Parameter

VRM

Stand-off voltage.

VBR

Breakdown voltage.

VCL

Clamping voltage.

IRM

Leakage current @ VRM.

IPP

Peak pulse current.

αT

Voltage temperature coefficient

Forward voltage drop

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Type

IRM @VRM

VBR @IR

VCL @IPP

αTC

max

min

max

note 2

10/1000

µs

8/20

µs

note 3

note 4

VAVA

-4/°C

SMLVT3V3

200

3.3

4.1

7.3

10.3

200

-5.3

5200

10 µ S

10 00 µ S

100

U S E W AV E F O R M 10/1000 µ S

Note 2 : Pulse test : tp <50ms

Note 3 :

∆VBR = αT * (Tamb - 25) * VBR(25°C).

Note 4 : VR = 0V,F= 1MHz.

100

125

150

175

200

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Tj initial (°C)

[Tj initial]

[Tj initial = 25°C]

Fig. 1 : Peak pulse power dissipation versus initial

junction temperature (printed circuit board).

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